Semiconductor film growth method

  • Inventors: ONO YASUO
  • Assignees: Nec Corp
  • Publication Date: January 13, 1989
  • Publication Number: JP-S6411315-A

Abstract

PURPOSE:To prevent group V ions from dropping out and to prevent a side gate effect in an FET, by making a III-V compound semiconductor grow epitaxially on a III-V compound semiconductor substrate in a semiconductor film growth method and next by implanting group V ions into the semiconductor substrate with a growth film in between after the growth method is finished. CONSTITUTION:After a deficient part of group V elements is made to grow, ion implantation is compensated to prevent the group V ions from dropping out. For example, an Al0.3Ga0.7As film 2 is made to grow by 100Angstrom on a GaAs substrate 1 so as to manufacture a MESFET. An As excessive region 3 is formed in this element by performing As ion implantation of 5X10<13>/cm<3> at 90KeV just after the growth of the Al0.3Ga0.7As is finished, so that an As excessive region 3 is formed.

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    JP-S5252366-AApril 27, 1977Matsushita Electric Ind Co LtdImprovement of crystallinity of semiconductor crystals
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